| PART |
Description |
Maker |
| IS6MC256K-60 |
x64 Interleaved Burst Mode SRAM Module X64的交错突发模式的SRAM模块
|
Central Semiconductor, Corp.
|
| WY128K72V-11G5C WY128K72V-11G5I WY128K72V-11G5M WY |
x72 Selectable Burst Mode SRAM Module x72可选的突发模式的SRAM模块
|
Kingbright, Corp.
|
| HYM572A224ATRG-80 |
x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
Vishay Intertechnology, Inc.
|
| R2A20112DD R2A20112SP |
Critical Conduction Mode Interleaved PFC Control IC
|
Renesas Electronics Corporation
|
| R2A20118ASP R2A20118ASPW0 |
Critical Conduction Mode Interleaved PFC Control IC
|
Renesas Electronics Corporation
|
| FAN9611 FAN9612 AN-6086 |
Design Consideration for Interleaved Boundary Conduction Mode PFC
|
Fairchild Semiconductor
|
| LT-74H73H-PG |
3.3V, 1.25 Gbps 1490 nm Continuous-Mode TX / 1.25 Gbps 1310 nm Burst-Mode RX 2X5 SFF Package, GE-PON OLT Transceiver
|
Optoway Technology Inc.
|
| SPL-54B33B-AG SPL-54B33B-G |
3.3V / 622 Mbps 1490 nm Continuous-Mode TX / 155 Mbps 1310 nm Burst-Mode RX ITU-T G.983.3 B-PON CLASS B SFP OLT Transceiver
|
Optoway Technology Inc
|
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
